Characterization of Zn1 − xMgxO transparent conducting thin films fabricated by multi-cathode RF-magnetron sputtering |
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Authors: | K Maejima H Shibata H Tampo K Matsubara S Niki |
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Affiliation: | National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8568, Japan |
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Abstract: | Transparent conducting thin films of Al-doped and Ga-doped Zn1 − xMgxO with arbitrary Mg content x were deposited on glass substrates by simultaneous RF-magnetron sputtering of doped ZnO and MgO targets, and their fundamental properties were characterized. MgO phase separation in Zn1 − xMgxO films was not detected by X-ray diffraction. The Zn1 − xMgxO films show high optical transparency in the visible region. Although the carrier density of the Zn1 − xMgxO films decreased with increasing x, the Zn1 − xMgxO films showed good electrical conductivity; electrical resistivity as low as 8 × 10− 4 Ω ·cm was achieved for the Zn0.9Mg0.1O:Ga thin film. |
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Keywords: | ZnMgO ZnO:Al (AZO) ZnO:Ga (GZO) Transparent conducting oxide RF-magnetron sputtering Wide bandgap |
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