Improved dielectric and ferroelectric properties in Ti-doped BiFeO3-PbTiO3 thin films prepared by pulsed laser deposition |
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Authors: | Ling Chen Wei Ren Weimin Zhu Peng Shi Xiaoqing Wu |
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Affiliation: | a Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China b Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6 |
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Abstract: | Ti-modified thin films of multiferroic 0.72Bi(Fe1 − xTix)O3-0.28PbTiO3 (BFPT, x = 0 and 0.02) solid solution were prepared by pulsed laser deposition. The BFPT (x = 0 and 0.02) films possess a tetragonal structure with highly preferential (001) orientation. The effects of the ionic substitution on the properties of BFPT (x = 0 and 0.02) films have been investigated. The leakage current of the BFPT (x = 0.02) thin film is significantly reduced, and the dielectric and ferroelectric properties greatly improved by the aliovalent ionic substitution of Ti4+ for Fe3+. The BFPT (x = 0.02) thin film exhibits a reasonably high remnant polarization Pr with 2Pr up to 90 μC/cm2 at 312 kV/cm and a switchable polarization up to 92 μC/cm2 at 417 kV/cm. |
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Keywords: | Multiferroics Thin films Pulsed laser deposition Dielectric properties Ferroelectric properties Ionic substitution X-ray diffraction Scanning electron microscopy |
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