Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers

Two kinds of HfSiO_x/interlayers (ILs)/Ge gate stack structures with HfGeN- and GeO₂-ILs were fabricated using electron cyclotron resonance (ECR) plasma sputtering and the subsequent post deposition annealing (PDA). It was found that HfGe was formed by the deposition of Hf metal on Ge and changed to HfGeN by N₂ ECR-plasma irradiation, which was used as IL. Another IL was GeO₂, which was grown by thermal oxidation at 500 °C. For dielectrics with HfGeN-IL, PDA of 550 °C resulted in effective oxide thickness (EOT) of 2.2 nm, hysteresis of 0.1 V, and interface state density (D_it) = 7 × 10¹² cm^− 2 eV^− 1. For dielectrics with GeO₂-IL, PDA of 500 °C resulted in EOT of 2.8 nm, hysteresis of 0.1 V, and D_it = 1 × 10¹² cm^− 2 eV^− 1. The structural change of HfSiO_x/GeO₂/Ge during the PDA was clarified by using X-ray photoelectron spectroscopy, and the gate stack formation for obtaining the good IL was discussed.