Fluorescence quenching by trapped charge carriers in N,N-dimethylaminobenzylidene 1,3-indandione films |
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Authors: | V Gulbinas R Karpicz L Valkunas |
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Affiliation: | a Institute of Physics, Savanoriu Ave. 231, LT-02300 Vilnius, Lithuania b Vilnius University, Sauletekio Ave. 9 Build 3, LT-10222 Vilnius, Lithuania c Institute of Solid State Physics, University of Latvia, Kengaraga 8, Riga, LV-10363, Latvia |
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Abstract: | Effects caused by the applied voltage on the steady state and time-resolved fluorescence of vacuum evaporated N,N-dimethylaminobenzylidene 1,3-indandione films sandwiched between gold and aluminium electrodes were investigated and discussed. Fluorescence enhancement and quenching as well as the fluorescence band narrowing depending on the applied voltage have been observed. Fluorescence decay and recovery take place on a time scale of tens of seconds after voltage is switched on and off. Similar fluorescence decay also takes place after switching on the excitation light. These fluorescence changes are attributed to the exciton quenching by trapped charge carriers. |
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Keywords: | Photoluminescence Fluorescence quenching Organic semiconductors Electric field |
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