The effect of annealing on Al-doped ZnO films deposited by RF magnetron sputtering method for transparent electrodes |
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Authors: | Hyung Jun Cho Byungyou Hong Jin Young Ju Mungi Park |
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Affiliation: | a School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Republic of Korea b College of Electrical Electronic and Information Engineering, Wonkwang University, IkSan, 570-749, Republic of Korea c KEPCO Korea Electric Power Research Institute, Daejeon 305-380, Republic of Korea d LG Display Co., Ltd., Paju, 413-811, Republic of Korea e Department of Electrical Engineering, Hanbat National University, Daejeon, 305-719, Republic of Korea |
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Abstract: | In this study, transparent conducting Al-doped zinc oxide (AZO) films with a thickness of 150 nm were prepared on Corning glass substrates by the RF magnetron sputtering with using a ZnO:Al (Al2O3: 2 wt.%) target at room temperature. This study investigated the effects of the post-annealing temperature and the annealing ambient on the structural, electrical and optical properties of the AZO films. The films were annealed at temperatures ranging from 300 to 500 °C in steps of 100 °C by using rapid thermal annealing equipment in oxygen. The thicknesses of the films were observed by field emission scanning electron microscopy (FE-SEM); their grain size was calculated from the X-ray diffraction (XRD) spectra using the Scherrer equation. XRD measurements showed the AZO films to be crystallized with strong (002) orientation as substrate temperature increases over 300 °C. Their electrical properties were investigated by using the Hall measurement and their transmittance was measured by UV-vis spectrometry. The AZO film annealed at the 500 °C in oxygen showed an electrical resistivity of 2.24 × 10− 3 Ω cm and a very high transmittance of 93.5% which were decreased about one order and increased about 9.4%, respectively, compared with as-deposited AZO film. |
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Keywords: | Al-doped zinc oxide Annealing treatment Transmittance Electrical properties |
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