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Sub-threshold study of undoped trigate nFinFET |
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| Authors: | G.C. Tettamanzi G.P. Lansbergen S. Lee N. Collaert S. Biesemans |
| Affiliation: | a Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands b Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47907, USA c InterUniversity Microelectronics Center (IMEC), Kapeldreef 75, 3001 Leuven, Belgium |
| Abstract: | Modern MOSFET devices with undoped channel have a non-trivial current distribution, which is gate voltage dependent. In our work we have studied the sub-threshold behavior of undoped triple gate MOSFETs (FinFETs) using a thermionic transport model. We have analyzed the conductance data of such devices, and from this, we have been able to determine the evolution of both the active cross-section area of the channel and the barrier height as a function of the gate voltage. The result of our experiments shows good agreement with tight binding simulations and with analytical results. This confirms the validity of the use of our thermionic approach to study transport in sub-micrometer size FinFET devices and not only in micrometer size samples specially made for characterizations. |
| Keywords: | Silicon Thermionic theory MOSFET Sub-threshold transport |
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