Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetron sputtering |
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| Authors: | W.T. Yen P.C. Yao Y.L. Chen |
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| Affiliation: | a Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan
b Department of Materials Science and Engineering, DaYeh University, Changhua 515, Taiwan |
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| Abstract: | In this study, highly conductive films of ZnO:Ga (GZO) were deposited by pulsed direct current magnetron sputtering to explore the effect of post-annealing on the structural, electrical and optical properties of the films. XRD patterns showed that after annealing, the intensity of c-axis preferentially oriented GZO (002) peak was apparently improved. GZO film annealing at 300 °C for 0.5 h exhibits lowest resistivity of 1.36 × 10− 4 Ω cm. In addition, the film shows good optical transmittance of 88% with optical band gap, 3.82 eV. Carrier concentration and optical band gap both decreases with the annealing temperature. Besides, the near-infrared transmittance at 1400 nm is below 5%, while the reflectivity at 2400 nm is as high as 70%. |
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| Keywords: | ZnO:Ga Annealing Pulsed direct current magnetron sputtering Optoelectronic properties Near-infrared reflective |
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