C-V calculations in CdS/CdTe thin films solar cells |
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Authors: | F.L. Castillo-Alvarado,J.A. Inoue-Chá vez,E. Sá nchez-Meza,G. Contreras-Puente |
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Affiliation: | a Escuela Superior de Física y Matemáticas-IPN, Edificio 9 U.P.A.L.M., C.P. 07738 México D.F., México b Programa de Ingeniería Molecular y Nuevos Materiales, Universidad Autónoma de la Ciudad de México, Av. Fray Servando Teresa de Mier 99, Col. Centro Del. Cuauhtémoc, C.P. 06060 México D.F., Mexico |
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Abstract: | Polycrystalline thin film CdS/CdTe heterojunction solar cells are important candidates for large scale photovoltaic applications. In this work we use a C-V (capacitance vs. voltage) theoretical method for the determination of the interface charge density σ and band discontinuity ΔEv of the CdS/CdTe heterojunction. The methodology is based on three cardinal equations: i) line up of the bands relative to the common Fermi level (at equilibrium) or the quasi-Fermi level (when voltage is applied), ii) charge neutrality and iii) the total capacitance of the heterostructure. We used CdS/CdTe solar cells, grown in our laboratory by the chemical bath deposition (for CdS film) and the close space vapor transport (for CdTe film) techniques. The interface parameters σ, and ΔEv are determined from C-V fitting between the calculated and the measured curve. The methodology presented in this study is general and can be applied to semiconductor-semiconductor and semimetal-semiconductor heterojunctions. |
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Keywords: | CdS/CdTe thin films C-V matching Solar cells Semiconductors |
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