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Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application |
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| Authors: | P. Zhou H. Shen L.Y. Chen Y. Lin |
| Affiliation: | a State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China b National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China c Department of Optical Science & Engineering, Fudan University, Shanghai 200433, China d Department of Microelectronics, Fudan University, Shanghai 200433, China |
| Abstract: | In this work, the advances in the resistance switching characteristics of stoichiometric ZrO2 thin films were studied. The Al/ZrO2/Al structure exhibits reliable and reproducible switching behaviours. The thickness dependence and electrode size effect was demonstrated and understood in terms of a combined model of conductive filament/carriers trapping. Analyses of current-voltage characteristics were performed and it is suggested that the resistive switching characteristics of the ZrO2 film are governed by both the electrode/interface effect and the formation of conductive multi-filaments. |
| Keywords: | Resistive switching Stoichiometric zirconium Non-volatile memory |
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