Radiation enhanced diffusion of B in crystalline Ge |
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Authors: | E. Bruno S. Mirabella G. Impellizzeri F. Priolo D. De Salvador A. Carnera |
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Affiliation: | a MATIS CNR-INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy b MATIS CNR-INFM and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy |
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Abstract: | In this work we propose an alternative methodology to study B diffusion in crystalline Ge. We enhance B diffusion by means of passing implants in such a way to increase the point-defects distribution through the sample, well above the equilibrium value. A comparison between B diffusion occurring under implantation with different ions or after post-implantation annealing allowed to discern any possible role of ionization effects on B diffusion. Indeed, B diffusion is demonstrated to occur through a point-defect-mediated mechanism. The diffusion mechanism is hence discussed. These results are a key point for a full comprehension of the B diffusion in Ge. |
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Keywords: | Germanium Boron Diffusion Ion implantation Point-defects |
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