Influence of N2 flow rate on the mechanical properties of SiNx films deposited by microwave electron cyclotron resonance magnetron sputtering |
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| Authors: | Wanyu Ding Jun Xu Xinlu Deng |
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| Affiliation: | a Institute of Optoelectronic Materials and Device, Dalian Jiaotong University, Dalian, 116028, China
b State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China |
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| Abstract: | Hydrogen-free amorphous silicon nitride (SiNx) films were deposited at room temperature by microwave electron cyclotron resonance plasma-enhanced unbalance magnetron sputtering. Varying the N2 flow rate, SiNx films with different properties were obtained. Characterization by Fourier-transform infrared spectrometry revealed the presence of Si-N and Si-O bonds in the films. Growth rates from 1.0 to 4.8 nm/min were determined by surface profiler. Optical emission spectroscopy showed the N element in plasma mainly existed as N+ species and N2+ species with 2 and 20 sccm N2 flow rate, respectively. With these results, the chemical composition and the mechanical properties of SiNx films strongly depended on the state of N element in plasma, which in turn was controlled by N2 flow rate. Finally, the film deposited with 2 sccm N2 flow rate showed no visible marks after immersed in etchant 6.7% Ce(NH4)2(NO3)6 and 93.3% H2O by weight] for 22 h and wear test for 20 min, respectively. |
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| Keywords: | Silicon nitride Plasma processing and deposition Fourier-transform infrared spectroscopy Mechanical properties |
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