Investigation on structural, electrical and optical properties of tungsten-doped tin oxide thin films |
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Authors: | Yanwei Huang |
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Affiliation: | Department of Materials Science, Fudan University, Shanghai 200433, China |
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Abstract: | Tungsten-doped tin oxide (SnO2:W) transparent conductive films were prepared on quartz substrates by pulsed plasma deposition method with a post-annealing. The structure, chemical states, electrical and optical properties of the films have been investigated with tungsten-doping content and annealing temperature. The lowest resistivity of 6.67 × 10− 4 Ω cm was obtained, with carrier mobility of 65 cm2 V− 1 s− 1 and carrier concentration of 1.44 × 1020 cm− 3 in 3 wt.% tungsten-doping films annealed at 800 °C in air. The average optical transmittance achieves 86% in the visible region, and approximately 85% in near-infrared region, with the optical band gap ranging from 4.05 eV to 4.22 eV. |
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Keywords: | Transparent conductive oxide (TCO) Tungsten-doped tin oxide Thin films Electrical and optical properties |
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