Blue-shift in photoluminescence of ion-milled HgCdTe films and relaxation of defects induced by the milling期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Blue-shift in photoluminescence of ion-milled HgCdTe films and relaxation of defects induced by the milling

Authors:	M. Pociask K.D. Mynbaev A.I. Izhnin N.N. Mikhailov V.S. Varavin

Affiliation:	^a Institute of Physics, Rzeszów University, 35-310 Rzeszów, Poland ^b R&D Institute for Materials SRC “Carat”, 79031 Lviv, Ukraine ^c Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, Russia ^d Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia

Abstract:	Simultaneous measurements of electrical conductivity, the Hall coefficient, and photoluminescence (PL) spectra of ion-milled Hg₁ ₋ _xCd_xTe films (x ∼ 0.30 and 0.38) were performed during post-milling ageing of the films at 293 K. In the course of the PL study, a ‘relaxation’ of the blue-shift of the PL band of ion-milled Hg_0.70Cd_0.30Te was observed. The relaxation was caused by the decrease of the electron concentration due to gradual disintegration of defects induced by the milling. It is shown that while ion milling substantially changes the electrical properties of Hg₁ _- _xCd_xTe, its PL spectrum in the long-term is affected insignificantly.

Keywords:	Ion bombardment Electrical properties and measurements Luminescence Semiconductors
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