Improved dielectric properties of CaCu3Ti4O12 thin films on oxide bottom electrode of La0.5Sr0.5CoO3 |
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| Authors: | Z.H. Sun H.B. Moon J.H. Cho |
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| Affiliation: | a RCDAMP, Pusan National University, Busan 609-735, Republic of Korea
b Nextron Corp., Pusan National University, Busan 609-735, Republic of Korea |
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| Abstract: | We report on the effect of La0.5Sr0.5CoO3 (LSCO) bottom electrode to the dielectric properties of CaCu3Ti4O12 (CCTO) thin films grown on Ir/Ti/SiO2/Si substrates. Compared with the films grown directly on Ir/Ti/SiO2/Si substrates, the dielectric constant has been increased greatly about 100%, and the dielectric loss decreased to lower than 0.2 in the frequency range of 1-100 kHz. The origin has been discussed in details based on the analysis of the X-ray diffraction and impedance spectra measurements. Results of the impedance spectra suggest that the absence of undesired interfacial layer between Ir/CCTO thin films might be one of the major reasons of the improvement of the dielectric properties when the LSCO was introduced as the bottom electrode. |
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| Keywords: | CaCu3Ti4O12 Thin films Dielectric properties Interfacial layer |
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