The dry etching of a sol-gel deposited ZnO thin film in a high density BCl3/Ar plasma |
| |
Authors: | Jong-Chang Woo |
| |
Affiliation: | School of Electrical and Electronics Engineering, Chung-Ang University, 221, Heukseok-Dong, Dongjak-Gu, Seoul 156-756, Republic of Korea |
| |
Abstract: | The etching characteristics of zinc oxide (ZnO) including the etch rate and the selectivity of ZnO in a BCl3/Ar plasma were investigated. It was found that the ZnO etch rate showed a non-monotonic behavior with an increasing BCl3 fraction in the BCl3/Ar plasma, along with the RF power, and gas pressure. At a BCl3 (80%)/Ar (20%) gas mixture, the maximum ZnO etch rate of 50.3 nm/min and the maximum etch selectivity of 0.75 for ZnO/Si were obtained. Plasma diagnostics done with a quadrupole mass spectrometer delivered the data on the ionic species composition in plasma. Due to the relatively high volatility of the by-products formed during the etching by the BCl3/Ar plasma, ion bombardment in addition to physical sputtering was required to obtain the high ZnO etch rates. The chemical state of the etched surfaces was investigated with X-ray Photoelectron Spectroscopy (XPS). Inferred from this data, it was suggested that the ZnO etch mechanism was due to ion enhanced chemical etching. |
| |
Keywords: | Zinc oxide Plasma etching Etch rate Selectivity X-ray Photoelectron Spectroscopy |
本文献已被 ScienceDirect 等数据库收录! |
|