| 快速热氮化SiO_2膜陷阱特性的研究 |
| |
| 引用本文： | 陈蒲生,杨光有,刘百勇.快速热氮化SiO_2膜陷阱特性的研究[J].半导体学报,1990,11(6):465-469. |
| |
| 作者姓名： | 陈蒲生 杨光有 刘百勇 |
| |
| 作者单位： | 华南理工大学物理系 广州
(陈蒲生，杨光有)，华南理工大学物理系 广州(刘百勇) |
| |
| 摘 要： | 本文采用雪崩热电子注入技术研究了快速热氯化SiO_2膜和氮化后再氧化SiO_2膜的体电子陷阱和界面态特性。揭示出电子陷阱的起源和放电机理;观察并解释了界面态密度随氮化时间以及平带电压漂移随注入时间的变化关系;提出降低体电子陷阱密度和界面态密度的有效途径。
|
| 关 键 词： | SiO2膜 热氮化 电子陷阱 电子注入 |
Study of Trap Characteristics of Rapid Thermal Nitrided SiO_2 Film |
| |
| Chen Pusheng/Dept. of Physics,South China University of TechnologyYang Guangyou/Dept. of Physics,South China University of TechnologyLiu Baiyong/Dept. of Physics,South China University of TechnologyLiu Zhihong/Dept. of Electrical and Electronic Engineering,University of Hong KongCheng Yaozong/Dept. of Electrical and Electronic Engineering,University of Hong Kong.Study of Trap Characteristics of Rapid Thermal Nitrided SiO_2 Film[J].Chinese Journal of Semiconductors,1990,11(6):465-469. |
| |
| Authors: | Chen Pusheng/Dept of Physics South China University of TechnologyYang Guangyou/Dept of Physics South China University of TechnologyLiu Baiyong/Dept of Physics South China University of TechnologyLiu Zhihong/Dept of Electrical and Electronic Engineering University of Hong KongCheng Yaozong/Dept of Electrical and Electronic Engineering University of Hong Kong |
| |
| Abstract: | This paper has studied the characteristics of bulk electron trap and interface state of rapidthermal nitrided SiO_2 film and reoxidized nitrided SiO_2 film with the technique of avalanchehotelectron injection.The origin and discharge mechanism of electron trap are revealed.Thechanges of interface state density with nitridation ime and flatband voltage shift with injectiontime are observed and explained.An effective way of decreasing bulk electron trapdensity and interface state density is put forward. |
| |
| Keywords: | Electron trap Interface states Avalanche Discharge Hot-electron injection |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
