| 用SF_6-N_2混合气的反应离子刻蚀制作WSi_x微米结构 |
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| 引用本文： | 程美乔,傅绍云,李建中.用SF_6-N_2混合气的反应离子刻蚀制作WSi_x微米结构[J].半导体学报,1990,11(5):355-359. |
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| 作者姓名： | 程美乔 傅绍云 李建中 |
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| 作者单位： | 中国科学院半导体研究所 北京
(程美乔，傅绍云)，中国科学院半导体研究所 北京(李建中) |
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| 摘 要： | 本文报道了ESi_x在SF_6-Ar、SF_6-N_2混合气中的反应离子刻蚀(RIE)的实验结果。研究了在SF_6-N_2的混合气中刻蚀WSi_x时,气体成分、气体流量、工作气压和输入功率对刻蚀速率的影响。发现在SF_6/N_2中刻蚀WSi_x微米结构具有优越性。实验结果的重复性较好,并在高速场效应器件、光电集成器件(微米结构)制作中得到应用。
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| 关 键 词： | SF－N混合气 离子刻蚀 Wsi微米结构 |
Fabrication of WSi_x Micron Structures Using RIE in SF_6-N_2 Mixture |
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| Cheng Meiqiao/Institute of Semiconductors,Academia Sinica,Beijing
Fu Shaoyun/Institute of Semiconductors,Academia Sinica,Beijing
Li Jianzhon/Institute of Semiconductors,Academia Sinica,Beijing.Fabrication of WSi_x Micron Structures Using RIE in SF_6-N_2 Mixture[J].Chinese Journal of Semiconductors,1990,11(5):355-359. |
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| Authors: | Cheng Meiqiao/Institute of Semiconductors Academia Sinica Beijing
Fu Shaoyun/Institute of Semiconductors Academia Sinica Beijing
Li Jianzhon/Institute of Semiconductors Academia Sinica Beijing |
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| Abstract: | This paper reports experiments on reactive ion etching of WSi_x using SF_6-Ar and SF_6-N_2as etchants.Etching characteristics are well studied with SF_6-N_2 system. N_2 is found to besuperior as a diluent of SF_6 in etching micrometen structures of WSi_x, and having good repeatability.GaAs MESFET and OEIC devices have been fabricated with the etching. |
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| Keywords: | SF_(6-)N_2 mixture reactive ion etching micron structures of WSi_(?) |
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