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高速HDI板互连应力失效研究
引用本文:唐海波,万里鹏,辜义成. 高速HDI板互连应力失效研究[J]. 印制电路信息, 2013, 0(7): 49-55
作者姓名:唐海波  万里鹏  辜义成
作者单位:东莞生益电子有限公司,广东 东莞,523039
摘    要:通过分析初步确定了影响高速系统HDI互连应力失效的因素为次外层铜厚、钻孔参数、等离子去钻污时间以及化学除胶参数等。采用正交试验的方法,发现孔壁去钻污不净是引起内层互连应力失效的主要原因。等离子去钻污时间越长,发生互连应力失效的概率越低;次外层铜厚、钻孔参数、等离子去钻污时间和除胶方式组合分别采用53.9μm、高速材料参数、15 min和不过膨胀时,内层互连合格率为100%,当采用最好或最差参数均会引起互连应力失效。

关 键 词:高速板材  互连应力失效  高密度互联

Interconnect defect research on high speed HDI PCB
TANG Hai-bo , WAN Li-peng , GU Yi-cheng. Interconnect defect research on high speed HDI PCB[J]. Printed Circuit Information, 2013, 0(7): 49-55
Authors:TANG Hai-bo    WAN Li-peng    GU Yi-cheng
Affiliation:TANG Hai-bo, WAN Li-peng, GU Yi-cheng
Abstract:Thickness of first inner layer foil,drilling condition,Plasma treating time and desmear,the main factors of high speed HDI board interconnect defect,were defined by basic analysis.The results of an orthogonal experiment showed that,smear of the hole wall is the main reason of interconnect defect.Increasing Plasma treating time can reduce the probability of interconnect defect.The thickness of first inner layer foil is 53.9 μm,B drilling condition,Plasma treated 15 minutes,chemical desmear without swelling lead to none interconnect defect,but the best and the worst conditions both can increase the probability of interconnect defect.
Keywords:High Speed Material  Interconnect Defect(ICD)  High Density Interconnect(HDI)
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