AlGaAs/Ge/GaAs heterojunction bipolar transistors grown bymolecular beam epitaxy |
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| Authors: | Strite S Unlu MS Adomi K Gao G-B Morkoc H |
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| Affiliation: | Coordinated Sci. Lab., Illinois Univ., Urbana, IL ; |
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| Abstract: | An N-Al0.22Ga0.78As emitter, p-Ge base, and n-GaAs collector (AlGaAs/Ge/GaAs) heterojunction bipolar transistor (HBT) in the emitter-up configuration grown by molecular beam epitaxy is discussed. Devices exhibited common-emitter current gains of as high as 300 at a collector current density of 2000 A/cm2 and a collector voltage of 4 V. As the device area is reduced from 50×50 to 10×40 μm, the current gain did not show significant changes, suggesting a low surface recombination velocity in the Ge base |
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