| V掺杂对Bi_(3.25)La_(0.75)Ti_3O_(12)层状结构铁电陶瓷电性能的影响 |
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| 引用本文： | 王晓军,黄平,崔彩娥.V掺杂对Bi_(3.25)La_(0.75)Ti_3O_(12)层状结构铁电陶瓷电性能的影响[J].稀有金属材料与工程,2009,38(Z2). |
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| 作者姓名： | 王晓军 黄平 崔彩娥 |
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| 作者单位： | 太原理工大学,山西,太原,030024 |
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| 基金项目： | 山西省自然科学基金资助，山西省科技攻关项目资助 |
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| 摘 要： | 用高温固相烧结法制备了V~(5+)掺杂的Bi_3.25La_0.75Ti_3O_(12)(BLT)层状结构铁电陶瓷.利用XRD对Bi_3.25La_0.75Ti_(3-x)VxO_(12+x/2)(BLTV-x)材料结构进行了晶相分析,结果表明所制备的陶瓷均具有单一的正交相结构.样品的介电常数温度谱显示:V~(5+)掺杂提高了材料的介电常数,x=0.03时介电常数最大,但样品的居里温度并没有发生大的变化.样品的介电损耗谱表明:由于V~(5+)掺入,由氧空位引起的样品介电损耗被极大的压制,在x=0.06时损耗最小.通过对材料的直流电导与温度关系的Arrhenius拟合,分析了样品的导电机理,结果显示V~(5+)的掺杂大大降低了材料中氧空位的浓度,使得陶瓷样品的电性能得到了很好的改善.
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| 关 键 词： | 介电损耗 激活能 电导率 |
Effects of V-Doping on the Electrical Properties of Bi_(3.25)La_(0.75)Ti_3O_(12) Layer-Structured Ferroelectric Ceramics |
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| Wang Xiaojun,Huang Ping,Cui Cai'e.Effects of V-Doping on the Electrical Properties of Bi_(3.25)La_(0.75)Ti_3O_(12) Layer-Structured Ferroelectric Ceramics[J].Rare Metal Materials and Engineering,2009,38(Z2). |
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| Authors: | Wang Xiaojun Huang Ping Cui Cai'e |
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| Affiliation: | Wang Xiaojun,Huang Ping,Cui Cai'e (Taiyuan University of Technology,Taiyuan 030024,China) |
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| Abstract: | V5+-doped Bi3.25La0.75Ti3O12 layer-structured ferroelectric ceramics were prepared by the high temperature solid-state reaction method. Their crystal structure was analyzed by X-ray diffraction,which shows that Bi3.25La0.75Ti3-xVxO12+x/2 material has a single orthorhombic structure. Temperature dependence of dielectric constants for Bi3.25La0.75Ti3-xVxO12+x/2 ceramics show with V5+ doping,the material dielectric constant increases,reaching to the highest at x=0.03,but the Curie temperatures had less change.... |
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| Keywords: | Bi_3 25La_0 75Ti_(3-x)V_xO_(12+x/2) dielectric loss activation energy electrical conductivity Bi_3 25La_0 75Ti_(3-x)VxO_(12+x/2) |
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