Self-pulsation in an InGaN laser-theory and experiment |
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| Authors: | Tronciu VZ Yamada M Ohno T Ito S Kawakami T Taneya M |
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| Affiliation: | Dept. of Electr. & Electron. Eng., Kanazawa Univ., Japan; |
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| Abstract: | Room-temperature operation of self-pulsating InGaN lasers was obtained at a wavelength of 395 nm. The laser structure consists of a multiquantum-well InGaN active layer and a p-type InGaN single-quantum-well saturable absorber. The frequency range of the self-pulsation was from 1.6 to 2.9 GHz. The experimental results were well explained with our theoretical analysis. We found that features of the saturable absorber strongly affect the self-pulsation. Influence of device and material parameters on the laser dynamics was also investigated. |
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