Microwave Dielectric Loss of Titanium Oxide |
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Authors: | Alan Templeton Xiaoru Wang Stuart J. Penn Stephen J. Webb Lesley F. Cohen Neil McN. Alford |
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Affiliation: | School of Electrical, Electronic and Information Engineering, South Bank University, London, SE1 0AA, United Kingdom, and Blackett Laboratory, Imperial College, London SW7 2BZ, United Kingdom |
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Abstract: | The dielectric loss (tan δ) of titanium dioxide (TiO2) disks has been measured at a frequency of 3 GHz. High-purity TiO2 sintered to almost-full density exhibits a very high tan δ, which is interpreted to be due to oxygen deficiency. To counter this, doping with stable divalent and trivalent cations, such as Mg and Al, leads to a low tan δ, probably by preventing Ti4+ reduction. The tan δ of polycrystalline TiO2 doped with divalent and trivalent ions with ionic radii in the range of 0.5–0.95 Å at 3 GHz can be very low: 6 × 10−5 ( Q ∼ 17 000) at a temperature of 300 K. The tan δ of undoped pure TiO2 disks increases when the disks are cooled from 300 K to ∼100 K. At temperatures <100 K, the tan δ decreases rapidly, which is interpreted as carrier freeze-out. The tan δ for all the high- Q doped TiO2 polycrystalline samples smoothly decrease to ∼5 × 10−6 ( Q ∼ 200 000) at 15 K, comparable to that of single crystals. |
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Keywords: | Titanium oxide dielectric materials/properties microwaves |
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