| 自绝缘氧化限制型850nm垂直腔面发射激光器 |
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| 引用本文： | 李特,郝二娟,王勇,芦鹏,李再金,李林,曲轶,刘国军. 自绝缘氧化限制型850nm垂直腔面发射激光器[J]. 固体电子学研究与进展, 2011, 31(6): 586-589 |
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| 作者姓名： | 李特 郝二娟 王勇 芦鹏 李再金 李林 曲轶 刘国军 |
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| 作者单位： | 1. 长春理工大学高功率半导体激光国家重点实验室,长春,130022
2. 吉林大学和平校区公共教学中心,长春,130013 |
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| 基金项目： | 国家自然科学基金资助项目，吉林省科技厅资助项目 |
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| 摘 要： | 介绍了一种制作氧化限制型垂直腔面发射激光器的新途径,自绝缘工艺.采用该工艺制作了氧化限制型850 nm VCSELs.详细地介绍了自绝缘器件的工作原理和制作流程,并对侧氧化相关参数进行了实验研究.在此基础上,制备了不同出光孔径的850 nm VCSELs器件,测得出光孔径12μm的器件最大输出功率达到10 mW,微分量...
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| 关 键 词： | 自绝缘 氧化限制垂直腔面发射激光器 850 nm 功率 |
Self-insulated Oxide-confined 850 nm VCSELs |
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| LI Te,HAO Erjuan,WANG Yong,LU Peng,LI Zaijin,LI Lin,QU Yi,LIU Guojun. Self-insulated Oxide-confined 850 nm VCSELs[J]. Research & Progress of Solid State Electronics, 2011, 31(6): 586-589 |
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| Authors: | LI Te HAO Erjuan WANG Yong LU Peng LI Zaijin LI Lin QU Yi LIU Guojun |
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| Abstract: | A new method named self-insulated process to fabricate oxidation confined VCSELs is reported,and 850 nm VCSELs are fabricated by this new process.The principle and process flow of the self-insulated process are described in detail.The key parameter of oxidation is investigated by experiment.The output characteristics of the 850 nm VCSELs with various emission diameters are measured.The maximum power is about 10 mW for the device with 12 μm emission diameter,and its differential quantum efficiency achieves about 43%.It is compared and analyzed that the devices with different diameters have different output performances. |
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| Keywords: | self-insulated oxide-confined VCSELs 850 nm power |
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