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| S波段35W GaN功率MMIC | |
| 引用本文： | 余旭明,洪伟,张斌,陈堂胜,陈辰. S波段35W GaN功率MMIC[J]. 固体电子学研究与进展, 2011, 31(6): 532-535 |
| 作者姓名： | 余旭明 洪伟 张斌 陈堂胜 陈辰 |
| 作者单位： | 1. 东南大学毫米波国家重点实验室,南京,210096;南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京,210016 2. 东南大学毫米波国家重点实验室,南京,210096 3. 南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京,210016 |
| 摘 要： | 报道了一款采用两级拓扑结构的2～4 GHz宽带高功率单片微波功率放大器芯片.放大器采用了微带结构,并使用电抗匹配进行设计,重点在于宽带功率效率平坦化设计.经匹配优化后放大器在2～4 GHz整个频带内脉冲输出功率大于35 W,小信号增益达到22 dB,在2.4 GHz频点处峰值输出功率达到40 W,对应的功率附加效率为3... |
| 关 键 词： | 铝镓氮/氮化镓 氮化镓功率放大器 宽带 S波段 微波单片集成电路 |
35 W S-band Power Amplifier MMIC Based on GaN Technology |
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| YU Xuming,HONG Wei,ZHANG Bin,CHEN Tangsheng,CHEN Chen. 35 W S-band Power Amplifier MMIC Based on GaN Technology[J]. Research & Progress of Solid State Electronics, 2011, 31(6): 532-535 | |
| Authors: | YU Xuming HONG Wei ZHANG Bin CHEN Tangsheng CHEN Chen |
| Abstract: | A 2~4 GHz broadband GaN power amplifier MMIC with two-stage topology was developed.The amplifier was designed in micro-strip technology and reactance matching network was adopted to reduce insert loss of the output stage and improve the MMIC′s associated efficiency.The amplifier provides a flat small signal gain of 22 dB and a pulsed saturated output power of 35 W at VDS=28 V from 2 GHz to 4 GHz frequency range.A peak output power of 40 W with power added efficiency of 35% was achieved at 2.4 GHz.The amplifier chip was processed with 76.2 mm,0.25 μm GaN HEMT MMIC technology.The size of the chip was 2.7 mm×2.3 mm. |
| Keywords: | AlGaN/GaN GaN power amplifier broadband S-band MMIC |
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