| 一种具有独特导通机理的新型超结IGBT |
| |
| 引用本文： | 王永维,陈星弼. 一种具有独特导通机理的新型超结IGBT[J]. 固体电子学研究与进展, 2011, 31(6): 545-548,600 |
| |
| 作者姓名： | 王永维 陈星弼 |
| |
| 作者单位： | 电子科技大学,电子薄膜与集成器件国家重点实验室,成都,610054 |
| |
| 摘 要： | 首次指出了超结IGBT这一新型功率半导体器件独特的导通机理并对其作了详细分析.通过TMAMEDICI仿真验证,超结IGBT耐压能力和正向导通能力都明显优于普通IGBT.并且发现,不同N柱、P柱掺杂浓度下器件的导通模式会在单极输运和双极输运之间相互改变,而这一特性是超结IGBT所独有的.也正是这一特殊的导通机理使得超结I...
|
| 关 键 词： | 超结 绝缘栅双极晶体管 电荷非平衡 击穿电压 导通压降 关断损耗 |
A Novel Super-junction IGBT and Its Unique Conducting Mechanism |
| |
| WANG Yongwei,CHEN Xingbi. A Novel Super-junction IGBT and Its Unique Conducting Mechanism[J]. Research & Progress of Solid State Electronics, 2011, 31(6): 545-548,600 |
| |
| Authors: | WANG Yongwei CHEN Xingbi |
| |
| Abstract: | In this paper,we introduce super-junction IGBT,also called SJ-IGBT and point out its unique conducting mechanism first time.Through extensive numerical simulation using TMA-MEDIC,it is found that the net doping concentration of N-pillar and P-pillar greatly influence the on-state characteristics of SJ-IGBT.The SJ-IGBT has a mixed conducting mechanism of bipolar transportation and unipolar transportation,which is different from any other power semiconductor device.Just for this unique characteristic,SJ-IGBT can greatly improve the relationship between on-state voltage and turn-off energy loss.In addition,we also discuss device′s blocking capability under different N-pillar & P-pillar doping concentration and the influence of charge imbalance effect. |
| |
| Keywords: | super-junction IGBT(insulated gate bipolar transistor) charge imbalance breakdown voltage on-state voltage turn off energy loss |
| 本文献已被 万方数据 等数据库收录！ |
|
