薄栅氧化层的TDDB研究

随着超大规模集成电路的不断发展,薄栅氧化层的质量对器件和电路可靠性的作用越来越重要。经时绝缘击穿(TDDB)是评价薄栅氧化层质量的重要方法。本文重点介绍了TDDB的几种主要击穿模型和机理,比较了软击穿和硬击穿过程的联系与区别,并初步分析了TDDB与测试电场、温度以及氧化层厚度的关系。

Research on TDDB of thin gate oxide

With the development of very large scale integrated(VLSI ),the quality of thin gate oxide plays a more important role in the reliability of devices and circuits.TDDB(time-dependent dielectric breakdown)is a key method to value the quality of thin gate oxide.In this paper,sev-eral main breakdown models of TDDB are introduced.Then SBD(soft breakdown)and HBD(hard breakdown)are compared.Finally the relationship between TDDB and field,temperature and gate oxide thickness are illuminated.