Synchrotron x-ray irradiation effects on the device characteristics and the resistance to hot-carrier damage of MOSFETs with 4 nm thick gate oxides |
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Authors: | Yuusuke Tanaka Akira Tanabe Katsumi Suzuki Tsutomu Miyatake Masaki Hirose |
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Affiliation: | (1) Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, 305 Ibaraki, Japan;(2) Laboratory for Quantum Equipment Technology, Sumitomo Heavy Industries Ltd., Japan |
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Abstract: | The effects of synchrotron x-ray irradiation on the device characteristics and hot-carrier resistance of n- and p-channel metal oxide semiconductor field effect transistors (MOSFETs) with 4 nm thick gate oxides are investigated. In p-channel MOSFETs, device characteristics were significantly affected by the x-ray irradiation but completely recovered after annealing, while the device characteristics in n-channel MOSFETs were not noticeably affected by the irradiation. This difference appears to be due to a difference in interface-state generation. In p-channel MOSFETs, defects caused by boron-ion penetration through the gate oxides may be sensitive to x-ray irradiation, causing the generation of many interface states. These interface states are completely eliminated after annealing in hydrogen gas. The effects of irradiation on the resistance to hot-carrier degradation in annealed 4 nm thick gate-oxide MOSFETs were negligible even at an x-ray dose of 6000 mJ/cm2. |
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Keywords: | Gate oxides hot carrier mobility metal oxide semiconductor field effect transistors (MOSFETs) x-ray irradiation |
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