| Growth Kinetic Studies for MOCVD CdTe and HgCdTe Epilayers on GaAs Substrates |
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| 引用本文： | 徐飞,彭瑞伍,丁永庆. Growth Kinetic Studies for MOCVD CdTe and HgCdTe Epilayers on GaAs Substrates[J]. 稀有金属(英文版), 1992, 0(1) |
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| 作者姓名： | 徐飞 彭瑞伍 丁永庆 |
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| 作者单位： | Shanghai Institute of Metallurgy. Chinese Academy of Sciences 865 Changning Road Shanghai 200050，People's Rep. of China，Shanghai Institute of Metallurgy. Chinese Academy of Sciences 865 Changning Road Shanghai 200050，People's Rep. of China，Shanghai Institute of Metallurgy. Chinese Academy of Sciences 865 Changning Road Shanghai 200050，People's Rep. of China |
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| 摘 要： | The growth rates of CdTe and CMT on GaAs and on CdTe / GaAs substrates were studied as a functionof temperature and gas composition. A Langmuir-Hinshelwood Model for surface reaction control region issuggested. The CdTe/GaAs interface was examined by X-ray double crystal diffraction, laser Ramanspectroscopy and transmission electron microscopy (TEM). A defect layer was observed at CdTe / GaAs inter-face. The relationship between interface qualities and electrical properties of CMT overlayers was discussed.
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Growth Kinetic Studies for MOCVD CdTe and HgCdTe Epilayers on GaAs Substrates |
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| Xu Fei,Peng Ruiwu,Ding Yongqing. Growth Kinetic Studies for MOCVD CdTe and HgCdTe Epilayers on GaAs Substrates[J]. Rare Metals, 1992, 0(1) |
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| Authors: | Xu Fei Peng Ruiwu Ding Yongqing |
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| Affiliation: | Xu Fei,Peng Ruiwu,Ding Yongqing Shanghai Institute of Metallurgy. Chinese Academy of Sciences,865 Changning Road,Shanghai 200050,People's Rep.of China |
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| Abstract: | The growth rates of CdTe and CMT on GaAs and on CdTe / GaAs substrates were studied as a function of temperature and gas composition. A Langmuir-Hinshelwood Model for surface reaction control region is suggested. The CdTe/GaAs interface was examined by X-ray double crystal diffraction, laser Raman spectroscopy and transmission electron microscopy (TEM). A defect layer was observed at CdTe / GaAs inter- face. The relationship between interface qualities and electrical properties of CMT overlayers was discussed. |
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| Keywords: | MOCVD CdTe HgCdTe Kinetics Interface |
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