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| 一种半绝缘键合SOI新型BCD结构 | |
| 引用本文： | 谭开洲,杨谟华,徐世六,刘玉奎,李肇基,刘勇,冯建. 一种半绝缘键合SOI新型BCD结构[J]. 半导体学报, 2007, 28(5): 763-767 |
| 作者姓名： | 谭开洲 杨谟华 徐世六 刘玉奎 李肇基 刘勇 冯建 |
| 作者单位： | 1. 电子科技大学微电子与固体电子学院,成都,610054;模拟集成电路国家重点实验室,重庆,400060 2. 电子科技大学微电子与固体电子学院,成都,610054 3. 模拟集成电路国家重点实验室,重庆,400060 |
| 基金项目： | 国家微电子预研资助项目 |
| 摘 要： | 提出了一种采用半绝缘SOI的新型BCD结构,该结构把高压大电流VDMOS,CMOS和双极器件同时可靠地集成在一起,其特点是集成了垂直导电的VDMOS.这种结构在汽车电子、抗辐射、强电磁脉冲环境等领域有较好的潜在应用.BCD样品芯片垂直导电VDMOS击穿电压为160V,导通电阻为0.3Ω,比导通电阻为26mΩ·cm2;npn,pMOS,nMOS击穿电压分别为50,35,30V;npn管β为120,ft为700MHz. |
| 关 键 词： | BCD 半绝缘SOI VDMOS 功率集成电路 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2006-12-23 |
A Novel BCD Structure with Semi-Insulation Bonding SOI |
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| Tan Kaizhou, Yang Mohua, Xu Shiliu, Liu Yukui, Li Zhaoji, Liu Yong, Feng Jian. A Novel BCD Structure with Semi-Insulation Bonding SOI[J]. Journal of Semiconductors, 2007, In Press. Tan K Z, Yang M H, Xu S L, Liu Y K, Li Z J, Liu Y, Feng J. A Novel BCD Structure with Semi-Insulation Bonding SOI[J]. Chin. J. Semicond., 2007, 28(5): 763.Export: BibTex EndNote | |
| Authors: | Tan Kaizhou Yang Mohua Xu Shiliu Liu Yukui Li Zhaoji Liu Yong Feng Jian |
| Affiliation: | School of Microelectronics and Solid-State Electronics,University of ElectronicScience and Technology,Chengdu 610054,China;National Laboratory of Analog Integrated Circuits,Chongqing 400060,China;School of Microelectronics and Solid-State Electronics,University of ElectronicScience and Technology,Chengdu 610054,China;National Laboratory of Analog Integrated Circuits,Chongqing 400060,China;National Laboratory of Analog Integrated Circuits,Chongqing 400060,China;School of Microelectronics and Solid-State Electronics,University of ElectronicScience and Technology,Chengdu 610054,China;National Laboratory of Analog Integrated Circuits,Chongqing 400060,China;National Laboratory of Analog Integrated Circuits,Chongqing 400060,China |
| Abstract: | A novel BCD structure with semi-insulation bonding SOI is proposed.It reliably integrates a high voltage power device,CMOS,and BJT into a monolithic circuit.Integrated VDMOS lengthways is a unique feature of this structure.It is a useful technique in applications of automotive electronics,radiation hardening,and strong electromagnetic pulses (EMP).The breakdown voltage of this BCD structure VDMOS is 160V,its on-resistance is 0.3Ω,and its specific on-resistance is 26mΩ·cm2.The breakdown voltages of npn,pMOS,and nMOS are 50,35,and 30V,respectively,and the npn current gain and cut-off frequency are 120 and 700MHz,respectively. |
| Keywords: | BCD semi-insulation SOI VDMOS power integrated circuit |
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