200K高特征温度的1.3μm AlInGaAs应变单量子阱激光器

在20～80℃范围内连续工作条件下,非对称波导层结构的1.3μm AlInGaAs/AlInAs单量子阱激光器的特征温度为200K,这是目前国内报道的相同有源材料、相同发射波长的激光器中最高的特征温度值.因此AlInGaAs是长波长光纤激光器的理想有源区材料.研究表明非对称波导结构能降低光吸收,提高激光器的高温特性和COD阈值.

1.3μm AlInGaAs Strained Single Quantum Well Laser Diodes with High Characteristic Temperature of 200K

A high characteristic temperature (T0) of 200K from a 1.3μm AlInGaAs/AlInAs single-quantum-well laser diode with the asymmetric waveguide layer structure under CW operation at 20 to 80℃ was obtained,which is the best result reported in the laser diodes (LDs) of the same active materials structure and emitting wavelength.AlInGaAs as an active layer,therefore,is very promising for the fabrication of long-wavelength LDs with excellent high-temperature performance.It is found that the asymmetric waveguide layer structure can decrease optical absorption and improve the high-temperature performance and catastrophic optical damage threshold of LDs.