| 一种用于非线性分析的新型4H-SiC MESFET大信号经验模型 |
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| 引用本文： | 曹全君,张义门,张玉明,吕红亮,郭辉,汤晓燕,王悦湖. 一种用于非线性分析的新型4H-SiC MESFET大信号经验模型[J]. 半导体学报, 2007, 28(7): 1023-1029 |
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| 作者姓名： | 曹全君 张义门 张玉明 吕红亮 郭辉 汤晓燕 王悦湖 |
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| 作者单位： | 西安电子科技大学微电子研究所,宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 提出了一种简洁的新型4H-SiCMESFET经验大信号模型.在Materka漏电流模型基础上,改进了沟道调制因子和饱和电压系数的建模方式,电容模型采用了改进的电荷守恒模型.参数的提取和优化采用了Levenberg-Marquardt优化方法.在偏置点VDS=20V,IDS=80mA和工作频率1.8GHz下,模型直流电流-电压扫描曲线、输出功率、功率附加效率和增益的模拟结果与实验数据符合良好.
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| 关 键 词： | 4H-SiC MESFET 大信号 经验模型 Levenberg-Marquardt优化方法 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-02-01 |
A New Empirical Large Signal Model of 4H-SiC MESFETs for the Nonlinear Analysis |
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| Cao Quanjun, Zhang Yimen, Zhang Yuming, Lü Hongliang, Guo Hui, Tang Xiaoyan, Wang Yuehu. A New Empirical Large Signal Model of 4H-SiC MESFETs for the Nonlinear Analysis[J]. Journal of Semiconductors, 2007, In Press. Cao Q J, Zhang Y M, Zhang Y M, Lü H, Guo H, Tang X Y, Wang Y H. A New Empirical Large Signal Model of 4H-SiC MESFETs for the Nonlinear Analysis[J]. Chin. J. Semicond., 2007, 28(7): 1023.Export: BibTex EndNote |
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| Authors: | Cao Quanjun Zhang Yimen Zhang Yuming Lü Hongliang Guo Hui Tang Xiaoyan Wang Yuehu |
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| Affiliation: | Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute,Xidian University,Xi'an 710071,China;Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute,Xidian University,Xi'an 710071,China;Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute,Xidian University,Xi'an 710071,China;Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute,Xidian University,Xi'an 710071,China;Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute,Xidian University,Xi'an 710071,China;Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute,Xidian University,Xi'an 710071,China;Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute,Xidian University,Xi'an 710071,China |
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| Abstract: | A new comprehensive empirical large signal model for 4H-SiC MESFETs is proposed. An enhanced drain current model,along with an improved charge conservation capacitance model,is presented by the improvement of the channel length modulation and the hyperbolic tangent function coefficient based on the Materka model. The Levenberg-Marquardt method is used to optimize the parameter extraction. A comparison of simulation results with experimental data is made, and good agreements of Ⅰ-Ⅴ curves, Pout (output power), PAE (power added efficiency), and gain at the bias of VDS = 20V, IDS = 80mA as well as the operational frequency of 1.8GHz are obtained. |
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| Keywords: | 4H-SiC MESFET large signal empirical model Levenberg-Marquardt method |
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