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氮掺杂对单壁碳纳米管的非平衡电子输运特性的影响
引用本文:韦建卫,胡慧芳,曾晖,王志勇,王磊,张丽娟. 氮掺杂对单壁碳纳米管的非平衡电子输运特性的影响[J]. 半导体学报, 2007, 28(8): 1216-1220
作者姓名:韦建卫  胡慧芳  曾晖  王志勇  王磊  张丽娟
作者单位:湖南大学物理与微电子科学学院,长沙,410082
摘    要:利用结合了非平衡格林函数的第一性原理的局域密度泛函理论,研究了氮原子取代掺杂单壁碳纳米管的输运特性.计算结果表明,不同构形和不同数目的氮原子掺杂对(8,0)单壁碳管的输运性能有复杂的影响.研究发现,氮原子的掺杂提高了半导体型碳管的输运性能,电流-电压曲线呈非线性变化.对于浓度相同的氮掺杂,原胞内最近邻氮原子间距极大地影响了碳管的输运性能.因此,基于掺杂管的分子器件的设计中很有必要考虑这些因素.

关 键 词:单壁碳纳米管  氮掺杂  输运特性
收稿时间:2015-08-18
修稿时间:2007-03-15

Effects of Nitrogen Substitutional Doping on the Nonequilibrium Electronic Transportation of Single Wall Carbon Nanotubes
Wei Jianwei, Hu Huifang, Zeng Hui, Wang Zhiyong, Wang Lei, Zhang Lijuan. Effects of Nitrogen Substitutional Doping on the Nonequilibrium Electronic Transportation of Single Wall Carbon Nanotubes[J]. Journal of Semiconductors, 2007, In Press. Wei J W, Hu H F, Zeng H, Wang Z Y, Wang L, Zhang L J. Effects of Nitrogen Substitutional Doping on the Nonequilibrium Electronic Transportation of Single Wall Carbon Nanotubes[J]. Chin. J. Semicond., 2007, 28(8): 1216.Export: BibTex EndNote
Authors:Wei Jianwei  Hu Huifang  Zeng Hui  Wang Zhiyong  Wang Lei  Zhang Lijuan
Affiliation:College of Physics and Microelectronic Sciences,Hunan University,Changsha 410082,China;College of Physics and Microelectronic Sciences,Hunan University,Changsha 410082,China;College of Physics and Microelectronic Sciences,Hunan University,Changsha 410082,China;College of Physics and Microelectronic Sciences,Hunan University,Changsha 410082,China;College of Physics and Microelectronic Sciences,Hunan University,Changsha 410082,China;College of Physics and Microelectronic Sciences,Hunan University,Changsha 410082,China
Abstract:Using density functional theory and nonequilibrium Green’s functions,the effects of nitrogen substitution doping on the transportation in pristine (8,0) zigzag carbon nanotubes was investigated.The results show that the configuration and the concentration of the doped atoms have complicated effects on the transportation properties of the single wall carbon tubes.The transportation properties are improved by the doping of nitrogen atoms.The current-voltage curves show nonlinear variation,and the currents of doped tubes are sensitive to the impurity atoms’ distribution in the cells for same concentration.Hence,it is necessary to consider these factors when designing molecular devices based on nitrogen-doped nanotubes.
Keywords:single wall carbon nanotubes   nitrogen doping   transportation
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