| Si-SiGe材料三维CMOS集成电路技术研究 |
| |
| 引用本文： | 胡辉勇,张鹤鸣,贾新章,戴显英,宣荣喜. Si-SiGe材料三维CMOS集成电路技术研究[J]. 半导体学报, 2007, 28(5): 681-685 |
| |
| 作者姓名： | 胡辉勇 张鹤鸣 贾新章 戴显英 宣荣喜 |
| |
| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
| |
| 摘 要： | 根据SiGe材料的物理特性,提出了一种新有源层材料的三维CMOS集成电路.该三维CMOS集成电路前序有源层仍采用Si材料,制作nMOS器件;后序有源层则采用SiGe材料,以制作pMOS器件.这样,电路的本征性能将由Si nMOS决定.使用MEDICI软件对Si-SiGe材料三维CMOS器件及Si-SiGe三维CMOS反相器的电学特性分别进行了模拟分析.模拟结果表明,与Si-Si三维CMOS结构相比,文中提出的Si-SiGe材料三维CMOS集成电路结构具有明显的速度优势.
|
| 关 键 词： | Si-SiGe 三维 CMOS 集成电路 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-01-07 |
Study on Si-SiGe Three-Dimensional CMOS Integrated Circuits |
| |
| Hu Huiyong, Zhang Heming, Jia Xinzhang, Dai Xianying, Xuan Rongxi. Study on Si-SiGe Three-Dimensional CMOS Integrated Circuits[J]. Journal of Semiconductors, 2007, In Press. Hu H Y, Zhang H M, Jia X Z, Dai X Y, Xuan R X. Study on Si-SiGe Three-Dimensional CMOS Integrated Circuits[J]. Chin. J. Semicond., 2007, 28(5): 681.Export: BibTex EndNote |
| |
| Authors: | Hu Huiyong Zhang Heming Jia Xinzhang Dai Xianying Xuan Rongxi |
| |
| Affiliation: | Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China |
| |
| Abstract: | Based on the physical characteristics of SiGe material,a new three-dimensional (3D) CMOS IC structure is proposed,in which the first device layer is made of Si material for nMOS devices and the second device layer is made of SixGe1-x material for pMOS.The intrinsic performance of ICs with the new structure is then limited by Si nMOS.The electrical characteristics of a Si-SiGe 3D CMOS device and inverter are all simulated and analyzed by MEDICI.The simulation results indicate that the Si-SiGe 3D CMOS ICs are faster than the Si-Si 3D CMOS ICs.The delay time of the 3D Si-SiGe CMOS inverter is 2～3ps,which is shorter than that of the 3D Si-Si CMOS inverter. |
| |
| Keywords: | Si-SiGe three-dimensional CMOS integrated circuits |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
