| 一种新型全耗尽双栅MOSFET |
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| 引用本文： | 张国和,邵志标,韩彬,刘德瑞. 一种新型全耗尽双栅MOSFET[J]. 半导体学报, 2007, 28(9): 1359-1363 |
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| 作者姓名： | 张国和 邵志标 韩彬 刘德瑞 |
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| 作者单位： | 西安交通大学电子科学与技术系,西安,710049 |
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| 摘 要： | 提出一种新型全耗尽双栅MOSFET,该器件具有异质栅和LDD结构.异质栅由主栅和两个侧栅组成,分区控制器件的沟道表面势垒.通过Tsuprem-4工艺模拟和Medici器件模拟验证表明,与普通双栅全耗尽SOI相比,该器件获得了更好的开态/关态电流比和亚阈值斜率.在0.18μm工艺下,开态/关态电流比约为1010,亚阈值斜率接近60mV/dec.
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| 关 键 词： | 异质栅 关态电流 亚阈值斜率 SOI场效应晶体管 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-05-14 |
A Novel Fully-Depleted Dual-Gate MOSFET |
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| Zhang Guohe, Shao Zhibiao, Han Bin, Liu Derui. A Novel Fully-Depleted Dual-Gate MOSFET[J]. Journal of Semiconductors, 2007, In Press. Zhang G H, Shao Z B, Han B, Liu D R. A Novel Fully-Depleted Dual-Gate MOSFET[J]. Chin. J. Semicond., 2007, 28(9): 1359.Export: BibTex EndNote |
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| Authors: | Zhang Guohe Shao Zhibiao Han Bin Liu Derui |
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| Affiliation: | Department of Microelectronics,Xi'an Jiaotong University,Xi'an 710049,China;Department of Microelectronics,Xi'an Jiaotong University,Xi'an 710049,China;Department of Microelectronics,Xi'an Jiaotong University,Xi'an 710049,China;Department of Microelectronics,Xi'an Jiaotong University,Xi'an 710049,China |
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| Abstract: | A novel fully-depleted dual-gate MOSFET with a hetero-material gate and a lightly-doped drain is proposed. The hetero-material gate,which consists of a main gate and two side-gates,is used to control the surface potential distribution. The fabrication process and the device characteristics are simulated with Tsuprem-4 and Medici separately. Compared to a common DG fully depleted SOI MOSFET,the proposed device has much higher on/off current ratio and superior sub-threshold slope. The on/off current ratio is about 100 and the sub-threshold slope is nearly 60mV/dec under a 0.18μm process. |
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| Keywords: | hetero-material gate on/off current ratio sub-threshold slope SOI FET |
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