| 利用保偏光纤马赫-曾德(MZ)干涉仪测量薄膜材料电光系数 |
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| 引用本文： | 屠晓光,赵雷,陈平,陈少武,左玉华,余金中,王启明. 利用保偏光纤马赫-曾德(MZ)干涉仪测量薄膜材料电光系数[J]. 半导体学报, 2007, 28(7): 1012-1016 |
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| 作者姓名： | 屠晓光 赵雷 陈平 陈少武 左玉华 余金中 王启明 |
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| 作者单位： | 中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，国家自然科学基金 |
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| 摘 要： | 利用保偏光纤MZ干涉仪测量了光学各向异性薄膜材料的电光效应.与传统MZ干涉仪相比,该干涉仪中所有的部件都采用保偏光纤进行连接.光源采用一个偏振输出最大功率为10mW的DFB激光器,用以得到高的信噪比.用该激光器测量超晶格材料的电光系数,同时用GaAs,KTP和GaN材料作为对比材料.测量的电光系数和已有结果有较好的可比性.
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| 关 键 词： | 电光效应 保偏光纤 MZ干涉仪 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-03-20 |
Electro-Optical Effect Measurement of Thin-Film Material Using PM Fiber Mach-Zehnder Interferometer |
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| Tu Xiaoguang, Zhao Lei, Chen Ping, Chen Shaowu, Zuo Yuhua, Yu Jinzhong, Wang Qiming. Electro-Optical Effect Measurement of Thin-Film Material Using PM Fiber Mach-Zehnder Interferometer[J]. Journal of Semiconductors, 2007, In Press. Tu X G, Zhao L, Chen P, Chen S W, Zuo Y H, Yu J Z, Wang Q M. Electro-Optical Effect Measurement of Thin-Film Material Using PM Fiber Mach-Zehnder Interferometer[J]. Chin. J. Semicond., 2007, 28(7): 1012.Export: BibTex EndNote |
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| Authors: | Tu Xiaoguang Zhao Lei Chen Ping Chen Shaowu Zuo Yuhua Yu Jinzhong Wang Qiming |
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| Affiliation: | State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | A polarization-maintaining (PM) fiber Mach-Zehnder (MZ) interferometer has been established to measure the EO effect of very thin film materials with optical anisotropy. Unlike a common MZ interferometer,all the components are connected via polarization-maintaining fibers. At the same time, a polarized DFB laser with a maximum power output of 10mW is adopted as the light source to induce a large extinction ratio. Here, we take it to determine the electro-optical coefficients of a very thin superlattice structure with GaAs, KTP, and GaN as comparative samples. The measured EO coefficients show good comparability with the others. |
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| Keywords: | electro-optic effect polarization-maintaining fiber Mach-Zehnder interferometer |
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