| 硅基键合InP-InGaAsP量子阱连续激光器的研制 |
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| 引用本文： | 于丽娟,赵洪泉,杜云,李敬,黄永箴. 硅基键合InP-InGaAsP量子阱连续激光器的研制[J]. 半导体学报, 2007, 28(7): 1117-1120 |
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| 作者姓名： | 于丽娟 赵洪泉 杜云 李敬 黄永箴 |
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| 作者单位： | 中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083 |
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| 基金项目： | 国家高技术研究发展计划(863计划)，国家自然科学基金 |
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| 摘 要： | 采用键合技术在Si基上制备了InP-InGaAsP量子阱激光器,实现了电注入室温连续工作.采用低温直接键合的方法,将Si衬底和InP-InGaAsP外延片键合在一起,并制成条宽6μm的脊波导边发射激光器.室温连续工作的1.55μm激光器阈值电流为48mA,对应的阈值电流密度和微分电阻分别为2.13kA/cm2和5.8Ω,在约220mA时输出光功率达15mW.
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| 关 键 词： | 硅基激光器 连续激射 直接键合 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-03-01 |
CW InP-InGaAsP Quantum-Well Laser on Si Fabricated by Wafer Bonding |
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| Yu Lijuan, Zhao Hongquan, Du Yun, Li Jing, Huang Yongzhen. CW InP-InGaAsP Quantum-Well Laser on Si Fabricated by Wafer Bonding[J]. Journal of Semiconductors, 2007, In Press. Yu L J, Zhao H Q, Du Y, Li J, Huang Y Z. CW InP-InGaAsP Quantum-Well Laser on Si Fabricated by Wafer Bonding[J]. Chin. J. Semicond., 2007, 28(7): 1117.Export: BibTex EndNote |
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| Authors: | Yu Lijuan Zhao Hongquan Du Yun Li Jing Huang Yongzhen |
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| Affiliation: | State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | A 1.55μm InP-InGaAsP quantum-well laser was fabricated on Si substrate by low-temperature wafer bonding,which lases at room temperature with electrical pumping.The InP epitaxy was designed and grown by MOCVD,then bonded to Si wafer.Finally,the laser with ridge-waveguide and edge-emission was fabricated.This laser runs continuous-wave with a threshold current of 48mA (current density of 1.65kA/cm2),differential resistance of 5.8W at the threshold current,and a maximum output power of 15mW at 220mA. |
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| Keywords: | Si-based laser continuous-wave lasing wafer bonding |
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