| 低功耗、高电源抑制比基准电压源的设计 |
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| 引用本文： | 应建华,陈嘉,王洁. 低功耗、高电源抑制比基准电压源的设计[J]. 半导体学报, 2007, 28(6): 975-979 |
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| 作者姓名： | 应建华 陈嘉 王洁 |
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| 作者单位： | 华中科技大学电子科学与技术系,武汉,430074 |
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| 基金项目： | 湖北省信息产业专项基金 |
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| 摘 要： | 提出一种新颖的自偏置有源负载放大器,设计构成了低功耗、高电源抑制比的基准电压源,并对基准电压源的低频电源抑制比和自偏置有源负载放大器的开环增益进行了分析.此基准电压源已用于一款电源管理芯片中,在德国XFAB公司XB06工艺上流片实现,芯片实测结果基准电压为1.206V,静态电流为6μA,温度系数为40ppm/℃,低频电源抑制比为85dB.
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| 关 键 词： | 基准电压源 低功耗 电源抑制比 自偏置有源负载放大器 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2006-12-18 |
Design of Low Power,High PSRR Voltage Reference |
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| Ying Jianhua, Chen Jia, Wang Jie. Design of Low Power,High PSRR Voltage Reference[J]. Journal of Semiconductors, 2007, In Press. Ying J H, Chen J, Wang J. Design of Low Power,High PSRR Voltage Reference[J]. Chin. J. Semicond., 2007, 28(6): 975.Export: BibTex EndNote |
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| Authors: | Ying Jianhua Chen Jia Wang Jie |
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| Affiliation: | Department of Electronic Science and Technology,Huazhong University of Science & Technology,Wuhan 430074,China;Department of Electronic Science and Technology,Huazhong University of Science & Technology,Wuhan 430074,China;Department of Electronic Science and Technology,Huazhong University of Science & Technology,Wuhan 430074,China |
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| Abstract: | A low power,high PSRR voltage reference with an amplifier and a novel self-bias active load is proposed.The low frequency PSRR of the voltage reference and the open-loop gain of the self-bias active load amplifier are discussed.The proposed voltage reference is implemented in an XFAB XB06 process.The nominal output is 1.206V,the supply current is 6mA,the temperature coefficient is 40ppm/℃,and the low frequency PSRR is 85dB. |
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| Keywords: | voltage reference low power high PSRR self-bias active load amplifier |
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