| 凹栅AlGaN/GaN HFET |
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| 引用本文： | 张志国,冯震,杨梦丽,冯志红,默江辉,蔡树军,杨克武. 凹栅AlGaN/GaN HFET[J]. 半导体学报, 2007, 28(9): 1420-1423 |
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| 作者姓名： | 张志国 冯震 杨梦丽 冯志红 默江辉 蔡树军 杨克武 |
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| 作者单位： | 1. 中国电子科技集团公司第十三研究所,石家庄,050051;专用集成电路国家级重点实验室,石家庄,050051;西安电子科技大学微电子学院,西安,710071
2. 中国电子科技集团公司第十三研究所,石家庄,050051;专用集成电路国家级重点实验室,石家庄,050051 |
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| 摘 要： | 研究了总栅宽为100μm栅凹槽结构的AlGaN/GaN HFET,采用相同的外延材料,凹槽栅结构器件与平面栅结构器件比较其饱和电流变化小,跨导由260.3mS/mm增加到314.8mS/mm,n由2.3减小到1.7,栅极漏电减小一个数量级.在频率为8GHz时,负载牵引系统测试显示,当工作电压增加到40V,输出功率密度达到11.74W/mm.
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| 关 键 词： | AlGaN/GaN HFET 凹栅 高电压 高功率密度 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-04-28 |
Recess-Gate AlGaN/GaN HFET |
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| Zhang Zhiguo, Feng Zhen, Yang Mengli, Feng Zhihong, Mo Jianghui, Cai Shujun, Yang Kewu. Recess-Gate AlGaN/GaN HFET[J]. Journal of Semiconductors, 2007, In Press. Zhang Z G, Feng Z, Yang M L, Feng Z H, Mo J H, Cai S J, Yang K W. Recess-Gate AlGaN/GaN HFET[J]. Chin. J. Semicond., 2007, 28(9): 1420.Export: BibTex EndNote |
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| Authors: | Zhang Zhiguo Feng Zhen Yang Mengli Feng Zhihong Mo Jianghui Cai Shujun Yang Kewu |
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| Affiliation: | The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China;National Key Laboratory of ASIC,Shijiazhuang 050051,China;School of Microelectronics,Xidian University,Xi′an 710071,China;The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China;National Key Laboratory of ASIC,Shijiazhuang 050051,China;The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China;National Key Laboratory of ASIC,Shijiazhuang 050051,China;The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China;National Key Laboratory of ASIC,Shijiazhuang 050051,China;The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China;National Key Laboratory of ASIC,Shijiazhuang 050051,China;The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China;National Key Laboratory of ASIC,Shijiazhuang 050051,China;The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China;National Key Laboratory of ASIC,Shijiazhuang 050051,China |
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| Abstract: | A recessed gate AlGaN/GaN HFET with a total gate length of 100μm is studied.The device demonstrates an increase in transconductance from 260.3 to 314.8mS/mm compared to the unrecessed device,while the saturation current changes slightly.Moreover,the ideality is improved from 2.3 to 1.7.An output power density of 11.74W/mm is achieved at 8GHz and 40V using a load pull system. |
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| Keywords: | AlGaN/GaN HFET recessed gate high voltage high power density |
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