| 基于InGaP/GaAs HBT的X波段MMIC功率放大器研制 |
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| 引用本文： | 陈延湖,申华军,王显泰,葛荠,李滨,刘新宇,吴德馨. 基于InGaP/GaAs HBT的X波段MMIC功率放大器研制[J]. 半导体学报, 2007, 28(5): 759-762 |
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| 作者姓名： | 陈延湖 申华军 王显泰 葛荠 李滨 刘新宇 吴德馨 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 研制了X波段的InGaP/GaAs HBT 单级MMIC功率放大器,该电路采用自行开发的GaAs HBT自对准工艺技术制作.电路偏置于AB类,小信号S参数测试在8～8.5GHz范围内,线性增益为8～9dB,输入驻波比小于2,输出驻波比小于3,优化集电极偏置后,线性增益为9～10dB.在8.5GHz进行连续波功率测试,在优化的负载阻抗条件下,P1dB输出功率为29.4dBm,相应增益7.2dB,相应PAE＞40%,电路的饱和输出功率Psat为30dBm.
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| 关 键 词： | HBT MMIC X波段 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2006-12-03 |
X Band MMIC Power Amplifier Based on InGaP/GaAs HBT |
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| Chen Yanhu, Shen Huajun, Wang Xiantai, Ge Ji, Li Bin, Liu Xinyu, Wu Dexin. X Band MMIC Power Amplifier Based on InGaP/GaAs HBT[J]. Journal of Semiconductors, 2007, In Press. Chen Y H, Shen H J, Wang X T, Ge J, Li B, Liu X Y, Wu D X. X Band MMIC Power Amplifier Based on InGaP/GaAs HBT[J]. Chin. J. Semicond., 2007, 28(5): 759.Export: BibTex EndNote |
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| Authors: | Chen Yanhu Shen Huajun Wang Xiantai Ge Ji Li Bin Liu Xinyu Wu Dexin |
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| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
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| Abstract: | An X band InGaP/GaAs HBT single stage MMIC power amplifier is reported.The self-aligning InGaP/GaAs HBT process was used to fabricate the circuit.The PA circuit is biased at the class AB state.The small signal S parameter test shows that at 8~8.5GHz,the linear power gain is 8~9dB,VSWRin＜2,and VSWRout＜3.After optimizing the collector bias,the linear gain is improved to 9~10dB.Under an 8.5GHz CW signal power test with optimized loading conditions,the P1dB of the circuit is 29.4dBm,relevant power gain is 7.2dB,and relevant PAE is 42%.The Psat of the circuit is 30dBm. |
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| Keywords: | HBT MMIC X band |
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