| 绝缘层/有源层界面修饰及对有机薄膜晶体管性能的影响 |
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| 引用本文： | 陈玲,朱文清,白钰,刘向,蒋雪茵,张志林. 绝缘层/有源层界面修饰及对有机薄膜晶体管性能的影响[J]. 半导体学报, 2007, 28(10): 1589-1593 |
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| 作者姓名： | 陈玲 朱文清 白钰 刘向 蒋雪茵 张志林 |
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| 作者单位： | 1. 上海大学新型显示技术与应用集成教育部重点实验室,上海,200072;上海大学材料科学与工程学院,上海,201800
2. 上海大学新型显示技术与应用集成教育部重点实验室,上海,200072 |
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| 摘 要： | 制备了具有修饰层的有机薄膜场效应晶体管,采用高掺杂Si作为栅极,传统的无机绝缘材料SiO2作为栅绝缘层,有机绝缘材料PMMA或OTS作为修饰层,CuPc作为有源层,Au作为源、漏极.测试结果表明,采用经过修饰的栅绝缘层SiO2/OTS和SiO2/PMMA的两种器件的开关电流比最高可达8×104,迁移率最高为1.22×10-3cm2/(V·s),而漏电流仅为10-10A,总体性能优于单层SiO2器件.
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| 关 键 词： | 有机薄膜晶体管 栅绝缘层 场效应迁移率 修饰层 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-05-31 |
Effects of Surface-Modified Gate Dielectrics on Electrical Characteristics of Organic Thin-Film Transistors |
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| Chen Ling, Zhu Wenqing, Bai Yu, Liu Xiang, Jiang Xueyin, Zhang Zhilin. Effects of Surface-Modified Gate Dielectrics on Electrical Characteristics of Organic Thin-Film Transistors[J]. Journal of Semiconductors, 2007, In Press. Chen L, Zhu W Q, Bai Y, Liu X, Jiang X Y, Zhang Z L. Effects of Surface-Modified Gate Dielectrics on Electrical Characteristics of Organic Thin-Film Transistors[J]. Chin. J. Semicond., 2007, 28(10): 1589.Export: BibTex EndNote |
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| Authors: | Chen Ling Zhu Wenqing Bai Yu Liu Xiang Jiang Xueyin Zhang Zhilin |
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| Affiliation: | Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China;School of Material Science and Engineering,Shanghai University,Shanghai 201800,China;Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China;School of Material Science and Engineering,Shanghai University,Shanghai 201800,China;Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China;Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China;Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China;Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China;School of Material Science and Engineering,Shanghai University,Shanghai 201800,China |
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| Abstract: | Organic thin film transistors (OTFTs) with a modified gate insulator are demonstrated.The modified gate insulator layers consist of SiO2 as the gate insulator and OTS (octadecyltrichlorosilane) or PMMA (poly methyl methacylate) as the modified layer.The devices with the modified layer have a field-effect mobility larger than 1e-3cm2/(V·s) and an on/off current ratio greater than 1e4,while their leakage current is decreased to 1e-10A.The results demonstrate that using modified gate insulators is an effective method to fabricate OTFTs with improved electric characteristics. |
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| Keywords: | organic thin-film transistors gate dielectric field-effect mobility modified layer |
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