| P-GaN ICP刻蚀损伤研究 |
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| 引用本文： | 龚欣,吕玲,郝跃,李培咸,周小伟,陈海峰. P-GaN ICP刻蚀损伤研究[J]. 半导体学报, 2007, 28(7): 1097-1103 |
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| 作者姓名： | 龚欣 吕玲 郝跃 李培咸 周小伟 陈海峰 |
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| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 运用Cl2/N2等离子体系统,系统研究了ICP刻蚀中ICP功率、RF功率、反应室压力和Cl2百分比对p型GaN材料的物理表面形貌和欧姆接触特性的影响.原子力显微镜显示,在文中所用的刻蚀条件范围内,刻蚀并没有引起表面形貌较大的变化,刻蚀表面的均方根粗糙度在1.2nm以下.结果还显示,已刻蚀p-GaN材料的电特性与物理表面形貌没有直观联系,刻蚀后欧姆接触特性变差更多地是因为刻蚀中浅施主能级的引入,使表面附近空穴浓度降低所致.
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| 关 键 词： | GaN 感应耦合等离子体刻蚀 等离子体损伤 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-01-26 |
Study on ICP Etching Induced Damage in p-GaN |
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| Gong Xin, Lü Ling, Hao Yue, Li Peixian, Zhou Xiaowei, Chen Haifeng. Study on ICP Etching Induced Damage in p-GaN[J]. Journal of Semiconductors, 2007, In Press. Gong X, Lü L, Hao Y, Li P X, Zhou X W, Chen H F. Study on ICP Etching Induced Damage in p-GaN[J]. Chin. J. Semicond., 2007, 28(7): 1097.Export: BibTex EndNote |
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| Authors: | Gong Xin Lü Ling Hao Yue Li Peixian Zhou Xiaowei Chen Haifeng |
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| Affiliation: | Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China |
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| Abstract: | The plasma-induced damage for p-GaN by inductively coupled plasma(ICP) etching with Cl2/N2 gas chemistry was studied.Effects of ICP power,RF power,chamber pressure,and Cl2 percentage on the physical and electrical characteristics of p-GaN were investigated.The results show that the surface roughness is relatively independent of these etching conditions and shows fairly smooth morphology (RMS＜1.2nm);the surface morphology has no direct effect on the electrical characteristics of p-GaN,and the deterioration of ohmic contact to the etched p-GaN is due to a decrease in hole concentration in the near-surface region through the creation of shallow donor states rather than surface roughening. |
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| Keywords: | GaN inductively coupled plasma etching plasma damage |
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