| 新型静电泄放保护电路设计方法 |
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| 引用本文： | 王源,陈中建,贾嵩,鲁文高,傅一玲,吉利久. 新型静电泄放保护电路设计方法[J]. 半导体学报, 2007, 28(7): 1156-1160 |
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| 作者姓名： | 王源 陈中建 贾嵩 鲁文高 傅一玲 吉利久 |
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| 作者单位： | 北京大学微电子研究院,北京,100871 |
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| 摘 要： | 提出了一种新的静电泄放(electrostatic discharge,ESD)保护电路设计方法.相比传统以经验为基础、采用电路设计和硅片验证之间反复实验的ESD设计方法,新方法降低了成本,缩短了设计周期.利用该方法完成了一套基于0.5μm CMOS工艺、带ESD保护电路的输入输出单元库设计,该单元库通过了5kV的人体模型ESD测试.
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| 关 键 词： | 静电泄放 人体模型 MOSFET 输人输出单元库 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-03-14 |
Novel Electrostatic Discharge Protection Design Method |
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| Wang Yuan, Chen Zhongjian, Jia Song, Lu Wengao, Fu Yiling, Ji Lijiu. Novel Electrostatic Discharge Protection Design Method[J]. Journal of Semiconductors, 2007, In Press. Wang Y, Chen Z J, Jia S, Lu W G, Fu Y L, Ji L J. Novel Electrostatic Discharge Protection Design Method[J]. Chin. J. Semicond., 2007, 28(7): 1156.Export: BibTex EndNote |
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| Authors: | Wang Yuan Chen Zhongjian Jia Song Lu Wengao Fu Yiling Ji Lijiu |
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| Affiliation: | Institute of Microelectronics,Peking University,Beijing 100871,China;Institute of Microelectronics,Peking University,Beijing 100871,China;Institute of Microelectronics,Peking University,Beijing 100871,China;Institute of Microelectronics,Peking University,Beijing 100871,China;Institute of Microelectronics,Peking University,Beijing 100871,China;Institute of Microelectronics,Peking University,Beijing 100871,China |
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| Abstract: | A novel ESD protection design method is proposed instead of the traditional experience-based trial-and-error electrostatic discharge (ESD) design approach.The new method resolves the costly and time-consuming problems of high-performance ESD protection development in sub/deep-sub micron CMOS technology.The method is conducted and verified in a 0.5μm CMOS process to accomplish I/O cell design of a CMOS ASIC library,whose human-body-model ESD level can be greater than 5kV. |
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| Keywords: | electrostatic discharge human body model MOSFET input/output cell library |
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