| 采用场板和B+离子注入边缘终端技术的Ti/4H-SiC肖特基势垒二极管 |
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| 引用本文： | 陈刚,李哲洋,柏松,任春江. 采用场板和B+离子注入边缘终端技术的Ti/4H-SiC肖特基势垒二极管[J]. 半导体学报, 2007, 28(9): 1333-1336 |
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| 作者姓名： | 陈刚 李哲洋 柏松 任春江 |
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| 作者单位： | 南京电子器件研究所单片集成电路与模块国家级重点实验室,南京,210016 |
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| 摘 要： | 采用自主外延的4H-SiC外延片,利用PECVD生长的SiO2做场板介质,B+离子注入边缘终端技术,制造了Ti/4H-SiC肖特基势垒二极管.测试结果表明,Ti/4H-SiC肖特基势垒二极管的理想因子n=1.08,势垒高度(ψe)=1.05eV,串联电阻为6.77mΩ·cm2,正向电压为4V时,电流密度达到430A/cm2.反向击穿电压大于1.1kV,室温下,反向电压为1.1kV时,反向漏电流为5.96×10-3 A/cm2.
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| 关 键 词： | 碳化硅 肖特基势垒二极管 理想因子 势垒高度 离子注入 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-04-24 |
Ti/4H-SiC Schottky Barrier Diodes with Field Plate and B+ Implantation Edge Termination Technology |
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| Chen Gang, Li Zheyang, Bai Song, Ren Chunjiang. Ti/4H-SiC Schottky Barrier Diodes with Field Plate and B+ Implantation Edge Termination Technology[J]. Journal of Semiconductors, 2007, In Press. Chen G, Li Z Y, Bai S, Ren C J. Ti/4H-SiC Schottky Barrier Diodes with Field Plate and B+ Implantation Edge Termination Technology[J]. Chin. J. Semicond., 2007, 28(9): 1333.Export: BibTex EndNote |
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| Authors: | Chen Gang Li Zheyang Bai Song Ren Chunjiang |
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| Affiliation: | National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China;National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China;National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China;National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China |
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| Abstract: | This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes(SBDs). The ideality factor n = 1.08 and effective Schottky barrier height (ψ)= 1.05eV of the SBDs were measured with the method of forward current density-voltage (J-V). A low reverse leakage current below 5.96 × 10-3A/cm2 at a bias voltage of - 1.1kV was obtained. By using B+ implantation, an amorphous layer as the edge termination was formed. We used the PECVD SiO2 as the field plate dielectric. The SBDs have an on-statk current density cm2. |
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| Keywords: | 4H-SiC Schottky barrier ideal factor barrier height implantation |
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