| GaAs基GaSb体材料及InAs/GaSb超晶格材料的MBE生长 |
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| 引用本文： | 郝瑞亭,徐应强,周志强,任正伟,牛智川. GaAs基GaSb体材料及InAs/GaSb超晶格材料的MBE生长[J]. 半导体学报, 2007, 28(7): 1088-1091 |
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| 作者姓名： | 郝瑞亭 徐应强 周志强 任正伟 牛智川 |
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| 作者单位： | 中国科学院半导体研究所超晶格国家重点实验室,北京,100083 |
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| 摘 要： | 采用分子束外延方法在GaAs(100)衬底上生长GaSb体材料,以此GaSb为缓冲层生长了不同InAs厚度的InAs/GaSb超晶格,其10K光致发光谱峰值波长在2.0～2.6 μm.高分辨透射电子显微镜观察证实超晶格界面清晰,周期完整.
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| 关 键 词： | 分子束外延 GaAs GaSb InAs/GaSb超晶格 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-02-05 |
GaSb Bulk Materials and InAs/GaSb Superlattices Grown by MBE on GaAs Substrates |
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| Hao Ruiting, Xu Yingqiang, Zhou Zhiqiang, Ren Zhengwei, Niu Zhichuan. GaSb Bulk Materials and InAs/GaSb Superlattices Grown by MBE on GaAs Substrates[J]. Journal of Semiconductors, 2007, In Press. Hao R T, Xu Y Q, Zhou Z Q, Ren Z W, Niu Z C. GaSb Bulk Materials and InAs/GaSb Superlattices Grown by MBE on GaAs Substrates[J]. Chin. J. Semicond., 2007, 28(7): 1088.Export: BibTex EndNote |
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| Authors: | Hao Ruiting Xu Yingqiang Zhou Zhiqiang Ren Zhengwei Niu Zhichuan |
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| Affiliation: | State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | GaSb thick layers were grown by molecular beam epitaxy on GaAs(100)substrates.High quality InAs/GaSb superlattices(SLs)with different InAs thicknesses were grown on GaSb buffer layers on GaAs substrates.The peak wavelengths of photoluminescence spectra at 10K are between 2~2.6μm.High-resolution transmission electron microscopy shows that the SLs have clear interface and integrated periods. |
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| Keywords: | molecular beam epitaxy GaAs GaSb InAs/GaSb superlattices |
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