| 截止频率为218GHz的超高速晶格匹配In0.53Ga0.47As/In0.52Al0.48As高电子迁移率晶体管 |
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| 引用本文： | 刘亮,张海英,尹军舰,李潇,徐静波,宋雨竹,牛洁斌,刘训春. 截止频率为218GHz的超高速晶格匹配In0.53Ga0.47As/In0.52Al0.48As高电子迁移率晶体管[J]. 半导体学报, 2007, 28(12) |
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| 作者姓名： | 刘亮 张海英 尹军舰 李潇 徐静波 宋雨竹 牛洁斌 刘训春 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，中国科学院资助项目 |
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| 摘 要： | 报道了截止频率为218GHz的晶格匹配的In0.53Ga0.47As/In0.52Al0.48As高电子迁移率晶体管.这是迄今为止国内报道的截止频率最高的高电子迁移率晶体管.器件直流特性也很优异:跨导为980mS/mm,最大电流密度为870mA/mm.文中的材料结构和所有器件制备工艺均为本研究小组自主研制开发.
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| 关 键 词： | 截止频率 高电子迁移率晶体管 InGaAs/InAlAs InP |
Ultrahigh-Speed Lattice-Matched In0.53Ga0.47As/In0.52Al0.48As HEMTs with 218GHz Cutoff Frequency |
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| Liu Liang,Zhang Haiying,Yin Junjian,Li Xiao,Xu Jingbo,Song Yuzhu,Niu Jiebin,Liu Xunchun. Ultrahigh-Speed Lattice-Matched In0.53Ga0.47As/In0.52Al0.48As HEMTs with 218GHz Cutoff Frequency[J]. Chinese Journal of Semiconductors, 2007, 28(12) |
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| Authors: | Liu Liang Zhang Haiying Yin Junjian Li Xiao Xu Jingbo Song Yuzhu Niu Jiebin Liu Xunchun |
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| Abstract: | Lattice-matched In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors (HEMTs) with a cutoff frequency (fT) as high as 218GHz are reported.This fT is the highest value ever reported for HEMTs in China.These devices also demonstrate excellent DC characteristics:the extrinsic transconductance is 980mS/mm and the maximum current density is 870mA/mm.The material structure and all the device fabrication technology in this work were developed by our group. |
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| Keywords: | cutoff frequency high electron mobility transistor InGaAs/InAlAs InP |
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