| 硼掺杂对非晶硅薄膜微结构和光电性能的影响 |
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| 引用本文： | 张溪文,沈大可,韩高荣.硼掺杂对非晶硅薄膜微结构和光电性能的影响[J].材料科学与工程学报,2001,19(1):30-33,16. |
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| 作者姓名： | 张溪文 沈大可 韩高荣 |
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| 作者单位： | 浙江大学硅材料科学国家重点实验室!杭州310027 |
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| 基金项目： | 国家自然科学基金，浙江省自然科学基金，69890230，698047，， |
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| 摘 要： | 以硅烷 (SiH4 )和硼烷 (B2 H6)为气相反应先驱体 ,采用等离子体增强化学气相沉积法 (PECVD)制备出轻掺硼非晶氢硅薄膜。X射线衍射、原子力显微镜和光、暗电导测试表明 ,一定程度的硼掺杂提高了非晶氢硅薄膜的电导率 ,降低了非晶氢硅薄膜的光、暗电导比 ,并促进了非晶氢硅薄膜中硅微晶粒的生长。红外吸收谱研究预示了大量的硼原子与硅、氢原子之间能形成某些形式的复合体 ,仅有少量硼元素对P型掺杂有贡献。
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| 关 键 词： | 非晶硅薄膜 硼掺杂 等离子增强化学气相沉积 |
| 文章编号： | 1004-793X(2001)01-0030-04 |
| 修稿时间： | 2000年12月25日 |
Influence of Boron Doping on Microstructure and Photoelectric Properties of Amorphous Silicon Films |
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| ZHANG Xi-wen,SHEN Da-ke,HAN Gao-rong.Influence of Boron Doping on Microstructure and Photoelectric Properties of Amorphous Silicon Films[J].Journal of Materials Science and Engineering,2001,19(1):30-33,16. |
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| Authors: | ZHANG Xi-wen SHEN Da-ke HAN Gao-rong |
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| Abstract: | Using hydrogen\|diluted SiH 4 and B 2H 6 as the precursor gases, boron lightly doped amorphous silicon films were obtained by the plasma\|enhanced chemical vapor deposition. According to the results from X\|ray diffraction, Atom Force Microscopy(AFM) and photo/dark photoconductivity measurements, lightly doping of boron increases the dark conductivity, decreases the photo/dark ratio and enhances the crystallization in amorphous silicon films. Results from FTIR confirm that various kinds of complex were formed among boron, silicon and hydrogen atoms. Only a small amount of boron atom act as acceptor. |
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| Keywords: | amorphous silicon film boron doping plasma enhanced chemical vapor deposition |
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