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Subsurface burnout mechanisms in gallium arsenide (GAAS) electronic devices |
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| Authors: | W T Anderson D V Morgan F A Buot A Christou |
| Abstract: | This paper reviews the present knowledge on subsurface burnout mechanisms in Gallium Arsenide (GaAs) electronic devices. The results of the work should assist in the creation of more reliable devices with greater radiation hardness. |
| Keywords: | Gallium arsenide (GaAs) Subsurface burnout wRadiation hardness |