| LY732－PMOSFET电场效应过程的计算机模拟 |
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| 引用本文： | 李惠军,马瑞芬,张保财.LY732－PMOSFET电场效应过程的计算机模拟[J].山东大学学报(工学版),1994(4). |
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| 作者姓名： | 李惠军 马瑞芬 张保财 |
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| 作者单位： | 山东工业大学电子工程系，济南半导体研究所 |
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| 摘 要： | 本文分析及研究了对绝缘栅ＬＹ７３２－ＰＭＯＳ－ＦＥＴ结构所进行的工艺及器件模拟的数据，重点在栅源偏压（ＶＣＳ）与ＭＯＳ结构界面电荷分布的定量关系上得到了与实验一致的结果，定量地描述了在常规偏压条件下硅衬底表面电荷的分布及行为，从而揭示了Ｐ－ＭＯＳＦＥＴ电场效应的微观过程．
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| 关 键 词： | 电场分布 阈值 工艺 计算机模拟 |
A COMPUTERIZED SIMULATION OF THE LY732-PMOSFET ELECTRIC FIELD EFFECT COURSE |
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| Li Huijun.A COMPUTERIZED SIMULATION OF THE LY732-PMOSFET ELECTRIC FIELD EFFECT COURSE[J].Journal of Shandong University of Technology,1994(4). |
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| Authors: | Li Huijun |
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| Abstract: | Analysis and researches that covering-grid LY732-PMOSFET structurewas simulated by technique and device are given.In the quantitative relation between gridsource partial voltage (VGS) and MOS structure boundary surface charges distribution,wehave won similar data to experiment.Distribution of silicon substrate surface charges at theroutine partial voltage condition was described quantitatively,revealing microcosmic course ofthe P-MOSFET electric field effect. |
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| Keywords: | Electric field distribution Threshold value Technique Computerized simulation |
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