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High-resolution scanning near-field EBIC microscopy: application to the characterisation of a shallow ion implanted p+-n silicon junction |
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| Authors: | Smaali K Fauré J El Hdiy A Troyon M |
| Affiliation: | aLaboratoire de Microscopies et d’Etude de Nanostructures, EA 3799, Université de Reims, 21 Rue Clément Ader, 51685 Reims Cedex 2, France bLaboratoire de Microscopie Electronique Analytique, ERM 0203, Université de Reims, 21 Rue Clément Ader, 51685 Reims Cedex 2, France |
| Abstract: | High-resolution electron beam induced current (EBIC) analyses were carried out on a shallow ion implanted p+–n silicon junction in a scanning electron microscope (SEM) and a scanning probe microscope (SPM) hybrid system. With this scanning near-field EBIC microscope, a sample can be conventionally imaged by SEM, its local topography investigated by SPM and high-resolution EBIC image simultaneously obtained. It is shown that the EBIC imaging capabilities of this combined instrument allows the study of p–n junctions with a resolution of about 20 nm. |
| Keywords: | EBIC AFM C-AFM p–n Junction |
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