| 工艺参数对Sol—Gel法制备的PLZT铁电薄膜结构和性能的影响 |
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| 引用本文： | 阎培渝,李龙土,张孝文. 工艺参数对Sol—Gel法制备的PLZT铁电薄膜结构和性能的影响[J]. 材料研究学报, 1995, 9(6): 535-538 |
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| 作者姓名： | 阎培渝 李龙土 张孝文 |
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| 作者单位： | 清华大学 |
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| 摘 要： | 用Ｓｏｌ－Ｇｅｌ法在镀铂硅片上制备了具有良好铁电性能的ＰＬＺＴ薄膜，研究了影响薄膜显微结构与电学性能的工艺因素，适宜的前体溶液浓度和水解度，低的热处理变温速率对防止薄电裂有利，ＰｂＴｉＯ３过渡怪改善ＰＬＺＴ薄膜的形核过程，使之纯钙钛矿结晶相，ＰｂＴｉＯ３过渡层及薄膜内细小的晶粒和空间荷电使薄膜剩余极化强度下降，矫顽场强上上升。
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| 关 键 词： | PLZT 铁电薄膜 Sol－Gel法 |
| 收稿时间： | 1995-12-25 |
| 修稿时间： | 1995-12-25 |
THE PROCESSING EFFECTS ON STRUCTURE AND PROPERTIES OF SOL-GEL DERIVED PLZT FERROELECTRIC THIN FILMS |
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| YAN Peiyu LI Longtu ZHANG Xiaowen. THE PROCESSING EFFECTS ON STRUCTURE AND PROPERTIES OF SOL-GEL DERIVED PLZT FERROELECTRIC THIN FILMS[J]. Chinese Journal of Materials Research, 1995, 9(6): 535-538 |
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| Authors: | YAN Peiyu LI Longtu ZHANG Xiaowen |
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| Affiliation: | YAN Peiyu LI Longtu ZHANG Xiaowen(Tsinghua University)(Correspondent: YAN Peiyu,Dept.of Materials Science and Engineering,Tsinghua University,Beijing ) |
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| Abstract: | PLZT thin films with good ferroelectric properties were fabricated using the sol-gel method on platinized silicon.The processing parameters affecting the microstructure and electric properties of thin films were investigated. Suitable concentration and hy |
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| Keywords: | PLZT erroelectric thin film sol-gel |
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